Room: MC603, McConnell Engineering building, 3480 University Street, H3A 0E9, Montreal, Quebec, Canada, Virtual: https://events.vtools.ieee.org/m/312248

Abstract : III-V compound semiconductor nanowires (NWs) have drawn much attention as nanoscale building blocks for integrated photonics/optoelectronics due to their nanoscale size, excellent optical properties and effectiveness in strain relaxation enabling the monolithic growth on lattice-mismatched substrates. In particular, NWs grown by selective area epitaxy technique have many advantages such as controllability of their size and position, high uniformity in diameter and length, as well as complementary metal-oxide-semiconductor (CMOS) process compatibility, facilitating their integration with other electronic devices. With suitable wavelength ranging from 1.3 to 1.6 μm and lattice match of constituent materials, InGaAs/InP quantum well (QW) has been being widely used for optical communication devices. However there has been limited understanding on the growth of InGaAs/InP QW in nanowire architecture and their application for optoelectronic devices such as lasers/LEDs and photodetectors. In this work, we present the study of the selective area epitaxy growth of InGaAs/InP multi-QW NW array by metalorganic chemical vapour deposition (MOCVD) technique, and the demonstration of nanowire LEDs/lasers and photodetectors with an investigation of their strong geometry related device properties by both numerical simulation and optoelectronic characterizations. Speaker(s): Prof. Lan Fu, Room: MC603, McConnell Engineering building, 3480 University Street, H3A 0E9, Montreal, Quebec, Canada, Virtual: https://events.vtools.ieee.org/m/312248